Storage device, electronic device, and method for controlling memory
AssigneeSamsung Electronics Co., Ltd.
InventorJonghwa Kim
Life of this patent
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Abstract
A storage device includes: a non-volatile memory configured to include a plurality of blocks having a plurality of word lines and to write data to the blocks or to erase data of the blocks; and a splitter configured to obtain write times for a plurality of word lines of a first block of the blocks while the non-volatile memory writes data in the first block, and to command the non-volatile memory to perform an erase operation on a second block of the blocks by the reference time when a write time for one of the word lines is shorter than the reference time.
Claims20
A storage device comprising:
- a non-volatile memory configured to include a plurality of blocks having a plurality of word lines and to write data to the blocks or to erase data of the blocks;
- and
- a splitter circuit configured to obtain write times for a plurality of word lines of a first block of the blocks while the non-volatile memory writes data in the first block, and to command the non-volatile memory to perform an erase operation on a second block of the blocks by a reference time when a write time for one of the word lines is shorter than the reference time.
A storage system comprising:
- a host configured to write data on a plurality of word lines of a first block included in a storage device and to erase data on a second block included in the storage device;
- and
- wherein the storage device is configured to
- obtain write times for the plurality of word lines of the first block while writing data in the first block, and
- in response to a command from the host, erase data in the second block for a remaining time when a write time for one of the plurality of word lines is shorter than a reference time.
A memory control method comprising:
- obtaining write times for a plurality of word lines of a write target block of a non-volatile memory while writing data in the write target block;
- obtaining a remaining time for each word line of the write target block of the non-volatile memory based on a longest write time among the write times while data is being written to the plurality of word lines of the write target block;
- and
- erasing data of an erase target block for a remaining time for each of the word lines when a write time for one of the plurality of word lines is shorter than a reference time.
Dependencies are inferred from the claim text.