G11C 2216/28
Floating gate memory programmed by reverse programming
Official title: Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage
G11C2216/28 (Floating gate memory programmed by reverse programming) appears on 23 US grants and 12 published applications in this corpus.
Search patents in G11C- Granted patents
- 23
- Published applications
- 12
- Assignees
- 17
- Inventors
- 46
- Latest grant
- 23 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 2 |
| 2006 | 2 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 0 |
| 2018 | 2 | 0 |
| 2019 | 0 | 1 |
| 2020 | 1 | 0 |
| 2021 | 1 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 0 |
| 2024 | 0 | 3 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Memories and operation methods thereof, memory systems and electronic devices23 Dec 2025US 12,505,890 B2Yangtze Memory Technologies Co., Ltd.
- Apparatus with multi-bit cell read mechanism and methods for operating the same3 Jun 2025US 12,322,447 B2Micron Technology, Inc.
- Memory device and operating method thereof1 Aug 2023US 11,715,524 B2SK hynix Inc.
- Reverse memory cell19 Jan 2021US 10,896,916 B2Sunrise Memory Corporation
- Concurrent multi-state program verify for non-volatile memory5 May 2020US 10,643,695 B1SanDisk Technologies LLC
- Apparatus with multi-bit cell read mechanism and methods for operating the same28 Aug 2025US 2025/0273272 A1Micron Technology, Inc.
- Memories and operation methods thereof, memory systems and electronic devices19 Sep 2024US 2024/0312536 A1Yangtze Memory Technologies Co., Ltd.
- Apparatus with multi-bit cell read mechanism and methods for operating the same11 Jul 2024US 2024/0233828 A9Micron Technology, Inc.
- Apparatus with multi-bit cell read mechanism and methods for operating the same25 Apr 2024US 2024/0135996 A1Micron Technology, Inc.
- Memory device and operating method thereof10 Feb 2022US 2022/0044732 A1SK hynix Inc.
Most cited
By later US patents
- Method for reverse programming of a flash EEPROM72US 5,357,463 AMicron Semiconductor, Inc. · 1994
- 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell60US 6,556,481 B1Aplus Flash Technology, Inc. · 2003
- Electrically erasable programmable read-only memory49US 4,377,857 AFairchild Camera and Instrument Corporation · 1983
- Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line48US 5,396,459 ASony Corporation · 1995
- Semiconductor memory array with buried drain lines and methods therefor35US 5,986,934 AWinbond Electronics Corp.I · 1999