3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell

A three step method for programming a flash memory array, comprising:

• a) erasing a block of an array containing nonvolatile memory cells by increasing a threshold voltage of a single transistor within each cell of the block, turning off said transistor and not requiring an erase correction,
• b) reverse programming a page contained within said block by decreasing said threshold voltage of said single transistor within each memory cell of the page,
• c) programming a selected memory cell within said page by increasing said threshold voltage of said single transistor within the selected memory cell.

A single transistor nonvolatile memory cell, comprising:

• a) erasing means for increasing a threshold voltage of a transistor with a floating gate contained within each cell of a block of memory cells , turning off said transistor and thereby not requiring an over erase correction,
• b) reverse programming means for decreasing said threshold voltage of the transistor contained within a page of said block of memory cells,
• c) programming means for increasing said threshold voltage of the transistor contained within a selected cell of said page.