G11C 2216/18
Flash erasure of all the cells in an array, sector or block
Official title: Flash erasure of all the cells in an array, sector or block simultaneously
G11C2216/18 (Flash erasure of all the cells in an array, sector or block) appears on 141 US grants and 114 published applications in this corpus.
Search patents in G11C- Granted patents
- 141
- Published applications
- 114
- Assignees
- 57
- Inventors
- 183
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 12 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 1 |
| 2002 | 10 | 14 |
| 2003 | 18 | 22 |
| 2004 | 10 | 7 |
| 2005 | 8 | 10 |
| 2006 | 11 | 19 |
| 2007 | 10 | 5 |
| 2008 | 14 | 3 |
| 2009 | 2 | 1 |
| 2010 | 3 | 3 |
| 2011 | 3 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 3 |
| 2015 | 2 | 2 |
| 2016 | 3 | 3 |
| 2017 | 2 | 2 |
| 2018 | 2 | 1 |
| 2019 | 0 | 2 |
| 2020 | 3 | 4 |
| 2021 | 6 | 6 |
| 2022 | 2 | 1 |
| 2023 | 1 | 3 |
| 2024 | 3 | 0 |
| 2025 | 1 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device and method of erasure operations using GIDL and negative wordline voltages14 Jul 2026US 12,682,958 B2SK hynix Inc.
- Non-volatile memory octo mode program and erase operation method with reduced test time4 Mar 2025US 12,243,609 B2SK keyfoundry Inc.
- Memory device and method of operating the memory device24 Dec 2024US 12,176,041 B2SK hynix Inc.
- Semiconductor device performing block program and operating method thereof27 Aug 2024US 12,073,887 B2Samsung Electronics Co., Ltd.
- Erase cycle healing using a high voltage pulse7 May 2024US 11,978,514 B2Micron Technology, Inc.
- Memory device performing erase operation in sub-block unit and operating method of memory device26 Mar 2026US 2026/0088116 A1SK hynix Inc.
- Memory device and method of operating the same8 May 2025US 2025/0149095 A1SK hynix Inc.
- Memory device and method of operating the memory device28 Dec 2023US 2023/0420056 A1SK hynix Inc.
- Non-volatile memory octo mode program and erase operation method with reduced test time23 Mar 2023US 2023/0087413 A1Key Foundry Co., Ltd.
- Semiconductor device performing block program and operating method thereof9 Feb 2023US 2023/0039489 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994
- Flash EEprom system524US 5,602,987 ASanDisk Corporation · 1997
- Flash EEPROM system with erase sector select437US 5,418,752 ASunDisk Corporation · 1995
- Flash EEPROM system205US 5,719,808 ASanDisk Corporation · 1998
- Flash EEprom system167US 6,149,316 ASanDisk Corporation · 2000