State dependent suspend-resume-go for performance improvement in a memory device

A memory device, comprising:

• a memory block that includes an array of memory cells that are arranged in a plurality of word lines;
• circuitry that is configured to program the memory cells of a selected word line of the plurality of word lines, during programming, the circuitry being configured to;
• in a program loop, apply a programming pulse at a programming voltage VPGM to a selected word line of the plurality of word lines to program a plurality of the memory cells of the selected word line to a target data state of a plurality of data states, each data state of the plurality of data states being associated with a unique threshold;
• suspend the programming operation for a suspension duration and then resume the programming operation;
• before a next program loop, compare the suspend duration to the threshold that is unique to the target data state;
• in response to the suspension duration being less than or equal to the threshold that is unique to the target data state, incrementally increase the programming voltage VPGM by a baseline step size dVPGM;
• and
• in response to the suspension duration being greater than the threshold that is unique to the target data state, incrementally increase the programming voltage VMPGM by a reduced step size dVPGM_SRG that is less than the baseline step size dVPGM.

An apparatus, comprising:

• a memory block that includes an array of memory cells that are arranged in a plurality of word lines;
• a programming means for programming the memory cells of a selected word line of the plurality of word lines, during programming, the programming means being configured to;
• in a program loop, apply a programming pulse at a programming voltage VPGM to a selected word line of the plurality of word lines to program a plurality of the memory cells of the selected word line to a target data state of a plurality of data states, wherein each data state of the plurality of data states is associated with a unique threshold;
• suspend the programming operation for a suspension duration and then resuming the programming operation;
• before a next program loop, compare the suspend duration to the threshold that is unique to the target data state,
• in response to the suspension duration being less than or equal to the threshold that is unique to the target data state, incrementally increase the programming voltage VPGM by a baseline step size dVPGM;
• and
• in response to the suspension duration being greater than the threshold that is unique to the target data state, incrementally increase the programming voltage VMPGM by a reduced step size dVPGM_SRG that is less than the baseline step size dVPGM.