C23C 16/452
By activating reactive gas streams before their introduction into the reaction chamber
Official title: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
C23C16/452 (By activating reactive gas streams before their introduction into the reaction chamber) appears on 801 US grants and 1,000 published applications in this corpus.
Search patents in C23C- Granted patents
- 801
- Published applications
- 1,000
- Assignees
- 339
- Inventors
- 2,047
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 8 | 0 |
| 1989 | 20 | 0 |
| 1990 | 17 | 0 |
| 1991 | 9 | 0 |
| 1992 | 13 | 0 |
| 1993 | 16 | 0 |
| 1994 | 13 | 0 |
| 1995 | 10 | 0 |
| 1996 | 15 | 0 |
| 1997 | 13 | 0 |
| 1998 | 14 | 0 |
| 1999 | 18 | 0 |
| 2000 | 19 | 0 |
| 2001 | 17 | 21 |
| 2002 | 28 | 36 |
| 2003 | 30 | 52 |
| 2004 | 20 | 30 |
| 2005 | 21 | 35 |
| 2006 | 19 | 39 |
| 2007 | 10 | 43 |
| 2008 | 14 | 30 |
| 2009 | 15 | 46 |
| 2010 | 20 | 29 |
| 2011 | 25 | 38 |
| 2012 | 20 | 30 |
| 2013 | 22 | 28 |
| 2014 | 16 | 43 |
| 2015 | 26 | 50 |
| 2016 | 22 | 43 |
| 2017 | 20 | 42 |
| 2018 | 25 | 37 |
| 2019 | 39 | 35 |
| 2020 | 27 | 40 |
| 2021 | 34 | 43 |
| 2022 | 28 | 52 |
| 2023 | 30 | 41 |
| 2024 | 27 | 40 |
| 2025 | 38 | 52 |
| 2026 | 19 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Film of graphitic carbon nitride for photoanode and a method for forming the same14 Jul 2026US 12,680,182 B2City University of Hong Kong
- Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors16 Jun 2026US 12,655,164 B2Seastar Chemicals Ulc
- Injection module for a process chamber16 Jun 2026US 12,655,521 B2APPLIED Materials.Inc.
- Methods and systems for forming a layer comprising silicon oxide9 Jun 2026US 12,652,974 B2ASM IP Holding B. V.
- Showerhead assembly with heated showerhead2 Jun 2026US 12,644,183 B2APPLIED Materials.Inc.
- Method for manufacturing metasurface with improved efficiency by imprinting process10 Sep 2026US 2026/0267032 A1Korea University Research and Business Foundation
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
- Furnace tube for plasma enhanced thin film deposition13 Aug 2026US 2026/0234802 A1ACM Research Korea CO., LTD.
- Methods and systems for filling a gap13 Aug 2026US 2026/0239900 A1ASM IP Holding B. V.
- Semiconductor processing systems configured for performing plasma enhanced chemical vapor deposition processes and associated methods9 Jul 2026US 2026/0193785 A1ASM IP Holding B. V.
Most cited
By later US patents
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Sequential chemical vapor deposition671US 6,652,924 B2Licensee for Microelectronics: ASM America, Inc. · 2003