Furnace tube for plasma enhanced thin film deposition

A furnace tube for plasma enhanced thin film deposition, comprising:

• a process tube, including a reaction chamber capable of accommodating a plurality of substrates and at least one ionization chamber disposed along the stacking direction of the plurality of substrates, the ionization chamber being provided with a plurality of first gas holes communicating with the reaction chamber;
• a gas supply tube, located in the ionization chamber, and provided with a plurality of second gas holes sequentially along the stacking direction of the plurality of substrates, the gas supply tube being used for transporting the process gas to be ionized and the process gas to be ionized being introduced into the ionization chamber through the second gas holes, after the process gas to be ionized being ionized in the ionization chamber, the ionized process gas being introduced into the reaction chamber through the first gas holes, so as to deposit a corresponding thin film on the surface of the substrate;
• a first electrode and a second electrode, located in the process tube and at the middle position of the ionization chamber, and arranged along the stacking direction of the plurality of substrates;
• wherein, the first electrode and/or the second electrode are/is supported by a baffle plate, one end of each baffle plate is connected to the corresponding electrode, and the other end of each baffle plate is connected to the inner wall of the ionization chamber, so that the process gas to be ionized passes between the first electrode and the second electrode to improve the ionization efficiency of the process gas, and the first gas holes are located on the vertical line of the line connecting between the first electrode and the second electrode.