Semiconductor processing systems configured for performing plasma enhanced chemical vapor deposition processes and associated methods
AssigneeASM IP Holding B.V.
InventorsKrishnaswamy Mahadevan, Kishor Patil, Fan Gao
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Abstract
Semiconductor processing systems for depositing an epitaxial layer on a substrate by a plasma enhanced chemical vapor deposition are disclosed. The semiconductor processing system includes a chamber body, a substrate support arranged within the chamber interior, and a plasma generation means configured for generating a reactive species within the chamber interior. Methods for depositing an epitaxial layer on a substrate by a plasma enhanced chemical vapor deposition process are also disclosed.
Claims23
A semiconductor processing system configured for performing plasma enhanced epitaxial deposition processes, the semiconductor processing system comprising:
- a chamber body having an upper wall, a lower wall, a first side wall and a second side wall opposing the first side wall, wherein the upper wall extends longitudinally between an injection end and a longitudinally opposite exhaust end, and the lower wall is below and parallel relative to the upper wall;
- a substrate support configured to support a substrate and arranged within a chamber interior between the injection end and the exhaust end;
- an injection flange comprising a plurality of injection ports coupled to the injection end and configured for introducing a vapor phase process gas into the chamber interior;
- and
- a plasma generation means configured for generating a reactive species from the vapor phase process gas within the chamber interior at a plasma generation zone disposed between the injection flange and the substrate support.
A method for depositing an epitaxial layer on a substrate by a plasma assisted chemical vapor deposition process, the method comprising:
- at a chamber body having an upper wall, a lower wall, a first side wall and a second side wall opposing the first side wall, wherein the upper wall extends longitudinally between an injection end and a longitudinally opposite exhaust end, and the lower wall is below and parallel relative to the upper wall;
- seating the substrate on a substrate support arranged within a chamber interior between the injection end and the exhaust end;
- introducing a vapor phase process gas into the chamber interior through an injection flange comprising a plurality of injection ports, the injection flange coupled to the injection end of the chamber body;
- generating a reactive species within the chamber interior at a plasma generation zone disposed between the injection flange and the substrate support by activating a plasma generation means configured for decomposing the vapor phase process gas into the reactive species;
- and
- depositing one or more epitaxial layers on the substrate.
Dependencies are inferred from the claim text.