Methods and systems for forming a layer comprising silicon oxide
AssigneeASM IP Holding B.V.
InventorsJihee Jeon, Timothee Blanquart, Viljami Pore, Charles Dezelah
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Abstract
Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.
Claims20
A method comprising, in the given order:
- positioning a substrate on a substrate support in a reaction chamber;
- and
- executing a plurality of deposition cycles, the deposition cycles comprising:
- a silicon precursor pulse that comprises:
- a precursor sub-pulse that comprises exposing the substrate to a silicon precursor, the silicon precursor comprising silicon and one or more of a group 13 element and a group 15 element;
- a precursor sub-purge that comprises exposing the substrate to a purge gas;
- and
- a plasma pulse that comprises exposing the substrate to a plasma treatment, wherein
- the plasma treatment comprises generating a plasma,
- thereby forming a layer comprising silicon on the substrate.
A method comprising, in the given order:
- positioning a substrate on a substrate support in a reaction chamber;
- and
- executing a plurality of deposition cycles, the deposition cycles comprising:
- a silicon precursor pulse that comprises:
- a precursor sub-pulse that comprises exposing the substrate to a silicon precursor, the silicon precursor comprising silicon and one or more of a group 13 element and a group 15 element;
- a precursor sub-purge that comprises exposing the substrate to a purge gas;
- and
- a plasma pulse that comprises exposing the substrate to a plasma treatment, wherein the plasma treatment comprises generating a plasma,
- thereby forming a layer comprising silicon on the substrate, wherein the silicon precursor has a formula given by
- with R1 and R2 being independently selected from silyl and alkylsilyl, and with R3 being H or an alkyl.
A semiconductor processing apparatus comprising:
- a reaction chamber comprising a substrate support for supporting a substrate;
- a heater constructed and arranged to heat the substrate in the reaction chamber;
- a plasma module comprising a radio frequency power source constructed and arranged to generate a plasma;
- a plasma gas source in fluid communication with the plasma module;
- a silicon precursor source in fluid connection with the reaction chamber via one or more precursor valves;
- and, a controller configured for causing the semiconductor processing apparatus to perform a method comprising:
- positioning a substrate on a substrate support in a reaction chamber;
- and
- executing a plurality of deposition cycles, the deposition cycles comprising:
- a silicon precursor pulse that comprises:
- a precursor sub-pulse that comprises exposing the substrate to a silicon precursor, the silicon precursor comprising silicon and one or more of a group 13 element and a group 15 element;
- and
- a precursor sub-purge that comprises exposing the substrate to a purge gas;
- and
- a plasma pulse that comprises exposing the substrate to a plasma treatment,
- wherein the plasma treatment comprises generating a plasma, thereby forming a layer comprising silicon on the substrate.
Dependencies are inferred from the claim text.