Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors
AssigneeSeastar Chemicals Ulc
InventorsDiana Fabulyak, Rajesh Odedra, Wesley Phillip Graff, Shaun Cembella, Cassidy Conover
Life of this patent
Estimating the term…
Abstract
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Claims13
An organometallic compound of Formula II:
- Sn(NR2(CH2)nA2)2
- wherein:
- each A2 is independently selected from NR2′ or O;
- each R2 group is independently selected from the group consisting of an alkyl having from 1 to 10 carbon atoms and an aryl group;
- each R2′ group is independently selected from the group consisting of hydrogen, an alkyl or acyl group having from 1 to 10 carbon atoms and an aryl group;
- or when one or two of A2 is NR2′, then one or two of the R2′ may optionally form a bond to the R2 that is in the same ring as the R2′;
- n is 2 or 3;
- optionally at least one of the (CH2) has one or more substitutions with an alkyl group having from 1 to 10 carbon atoms.
Dependencies are inferred from the claim text.