C23C 16/405
Of refractory metals or yttrium
Official title: {of refractory metals or yttrium}
C23C16/405 (Of refractory metals or yttrium) appears on 1,218 US grants and 1,741 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,218
- Published applications
- 1,741
- Assignees
- 532
- Inventors
- 3,133
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 8 | 0 |
| 1991 | 1 | 0 |
| 1992 | 7 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 10 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 11 | 0 |
| 2001 | 22 | 13 |
| 2002 | 20 | 48 |
| 2003 | 28 | 36 |
| 2004 | 22 | 41 |
| 2005 | 34 | 67 |
| 2006 | 31 | 70 |
| 2007 | 27 | 46 |
| 2008 | 23 | 64 |
| 2009 | 45 | 66 |
| 2010 | 39 | 47 |
| 2011 | 38 | 56 |
| 2012 | 33 | 51 |
| 2013 | 32 | 50 |
| 2014 | 49 | 49 |
| 2015 | 37 | 70 |
| 2016 | 42 | 80 |
| 2017 | 44 | 64 |
| 2018 | 47 | 71 |
| 2019 | 57 | 87 |
| 2020 | 62 | 96 |
| 2021 | 62 | 94 |
| 2022 | 68 | 101 |
| 2023 | 72 | 110 |
| 2024 | 65 | 103 |
| 2025 | 78 | 89 |
| 2026 | 48 | 72 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing a redistribution layer, redistribution layer, integrated circuit and methods for electrically testing and protecting the integrated circuit6 Oct 2026US 12,753,493 B2STMicroelectronics S,r.l.
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Methods of making nanopowders, nanoceramic materials and nanoceramic components15 Sep 2026US 12,735,363 B2APPLIED Materials.Inc.
- Environmental barrier coating and method of applying the same15 Sep 2026US 12,735,365 B2Rtx Corporation
- Multilayer ald coating for critical components in process chamber24 Sep 2026US 2026/0286513 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus24 Sep 2026US 2026/0286517 A1Kokusai Electric Corporation
- Method for depositing a coating on an item, such as a clockwork component and item coated by such a method24 Sep 2026US 2026/0288068 A1The Swatch Group Research and Development Ltd
- Defect density manipulation of a dielectric layer in semiconductor fabrication in an atomic layer deposition chamber17 Sep 2026US 2026/0275524 A1The Research Foundation for The State University of New York
- A plasma etch-resistant film and a method for its fabrication17 Sep 2026US 2026/0279736 A1Beneq Oy
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus for performing growth of compound thin films918US 4,389,973 AOy Lohja AB · 1983
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002
- Method for performing growth of compound thin films750US 4,413,022 ACanon Kabushiki Kaisha · 1983