Method for performing growth of compound thin films
AssigneeCanon Kabushiki Kaisha
InventorsTuomo S. Suntola, Arto J. Pakkala, Sven G. Lindfors
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Abstract
A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Claims5
A method of growing a compound thin film of different elements on a substrate surface by providing alternate surface reactions, in a single chamber, of different substances respectively containing said different elements, comprising the steps of supplying vapors of said substances repeatedly and alternately to a chamber housing said substrate, supplying a gas phase medium to said chamber at least during periods between the alternate supply of said substances, wherein said vapors react with the surfaces of the substrate to produce a film, said vapors alternately and subsequently reacting with the film to cause said film to grow to provide a solid state product at the temperature of said substrate surface, and wherein the supply of said gas phase medium alternately voids the chamber of each of said substances thereby substantially preventing a simultaneous interaction of said alternately supplied vapors during the growth of said compound thin film on said substrate.
Dependencies are inferred from the claim text.