Defect density manipulation of a dielectric layer in semiconductor fabrication in an atomic layer deposition chamber

A system of depositing a thin or ultra-thin film layer via atomic layer deposition (ALD), comprising:

• a rotating platform that rotates between one or more sections within the same process chamber;
• at least one substrate located on the rotating platform;
• and
• a thin and ultra-thin film deposited on at least one substrate within at least one ALD process chamber,
• wherein the platform being rotated at a predetermined velocity such that the dielectric layer includes a predetermined concentration of defects.

A semiconductor device including at least one thin or ultra-thin film having a predetermined concentration of defects, the semiconductor device produced from an atomic layer deposition (ALD) process comprising the steps of:

• providing at least one substrate on a rotating platform that rotates between one or more sections in a process chamber;
• depositing a dielectric layer over the at least one substrate;
• and
• rotating the platform at a predetermined velocity such that the thin and ultra-thin film includes a predetermined concentration of defects.

A system of depositing a thin or ultra-thin film layer via atomic layer deposition (ALD), comprising:

• a rotating platform that rotates between one or more sections within the same process chamber;
• at least one substrate located on the rotating platform;
• and
• a thin and ultra-thin film deposited on at least one substrate within at least one ALD process chamber,
• wherein the platform being rotated at a predetermined velocity such that the thin or ultra-thin film form a meta-stable film such as NbO2, NbO, TaO, TaO2.