C23C 16/40
Oxides
C23C16/40 (Oxides) appears on 5,977 US grants and 7,475 published applications in this corpus.
Search patents in C23C- Granted patents
- 5,977
- Published applications
- 7,475
- Assignees
- 1,617
- Inventors
- 11,769
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 7 | 0 |
| 1978 | 6 | 0 |
| 1979 | 5 | 0 |
| 1980 | 6 | 0 |
| 1981 | 10 | 0 |
| 1982 | 9 | 0 |
| 1983 | 15 | 0 |
| 1984 | 4 | 0 |
| 1985 | 10 | 0 |
| 1986 | 15 | 0 |
| 1987 | 13 | 0 |
| 1988 | 20 | 0 |
| 1989 | 23 | 0 |
| 1990 | 26 | 0 |
| 1991 | 23 | 0 |
| 1992 | 34 | 0 |
| 1993 | 40 | 0 |
| 1994 | 56 | 0 |
| 1995 | 51 | 0 |
| 1996 | 51 | 0 |
| 1997 | 67 | 0 |
| 1998 | 84 | 0 |
| 1999 | 105 | 0 |
| 2000 | 142 | 0 |
| 2001 | 141 | 75 |
| 2002 | 178 | 218 |
| 2003 | 188 | 255 |
| 2004 | 165 | 243 |
| 2005 | 156 | 280 |
| 2006 | 172 | 282 |
| 2007 | 129 | 223 |
| 2008 | 133 | 237 |
| 2009 | 133 | 261 |
| 2010 | 171 | 238 |
| 2011 | 172 | 210 |
| 2012 | 156 | 220 |
| 2013 | 171 | 226 |
| 2014 | 178 | 252 |
| 2015 | 186 | 289 |
| 2016 | 185 | 277 |
| 2017 | 207 | 283 |
| 2018 | 202 | 303 |
| 2019 | 241 | 352 |
| 2020 | 262 | 402 |
| 2021 | 231 | 379 |
| 2022 | 252 | 460 |
| 2023 | 270 | 434 |
| 2024 | 291 | 412 |
| 2025 | 351 | 397 |
| 2026 | 224 | 267 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C23C 16/401Containing silicon2,867
- C23C 16/405Of refractory metals or yttrium1,218
- C23C 16/403Of aluminium, magnesium or beryllium1,071
- C23C 16/407Of zinc, germanium, cadmium, indium, tin, thallium or bismuth379
- C23C 16/409Of the type abo3 with a representing alkali, alkaline earth metal or316
- C23C 16/408Of copper or solid solutions thereof122
- C23C 16/406Of iron group metals82
- C23C 16/404Of alkaline earth metals36
Recent patents
- Filling method and film forming apparatus6 Oct 2026US 12,753,491 B2Tokyo Electron Limited
- Method of manufacturing a redistribution layer, redistribution layer, integrated circuit and methods for electrically testing and protecting the integrated circuit6 Oct 2026US 12,753,493 B2STMicroelectronics S,r.l.
- Article with transparent conductive layer and method of making the same6 Oct 2026US 12,757,521 B2Vitro Flat Glass LLC
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of processing substrate, recording medium, substrate processing apparatus and method of manufacturing semiconductor device6 Oct 2026US 12,757,652 B2Kokusai Electric Corporation
- Process for improving flash sintering of ceramics and improved ceramics8 Oct 2026US 2026/0308072 A1The Regents of the University of Colorado, a body corporate
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Alloy microstructure formation for chamber components1 Oct 2026US 2026/0295665 A1APPLIED Materials.Inc.
- Functionalized organotin precursors and related methods1 Oct 2026US 2026/0297117 A1Entegris, Inc.
- Method and apparatus for producing metallic silicon1 Oct 2026US 2026/0297732 A1Honda Motor Co., Ltd.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus for performing growth of compound thin films918US 4,389,973 AOy Lohja AB · 1983
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001