C23C 16/409
Of the type abo3 with a representing alkali, alkaline earth metal or
Official title: {of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide}
C23C16/409 (Of the type abo3 with a representing alkali, alkaline earth metal or) appears on 316 US grants and 262 published applications in this corpus.
Search patents in C23C- Granted patents
- 316
- Published applications
- 262
- Assignees
- 137
- Inventors
- 624
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 7 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 10 | 0 |
| 1998 | 13 | 0 |
| 1999 | 12 | 0 |
| 2000 | 21 | 0 |
| 2001 | 20 | 13 |
| 2002 | 29 | 32 |
| 2003 | 22 | 32 |
| 2004 | 24 | 19 |
| 2005 | 17 | 12 |
| 2006 | 14 | 10 |
| 2007 | 6 | 10 |
| 2008 | 6 | 13 |
| 2009 | 5 | 14 |
| 2010 | 8 | 14 |
| 2011 | 7 | 16 |
| 2012 | 11 | 11 |
| 2013 | 11 | 10 |
| 2014 | 9 | 14 |
| 2015 | 8 | 4 |
| 2016 | 6 | 3 |
| 2017 | 8 | 2 |
| 2018 | 1 | 2 |
| 2019 | 2 | 2 |
| 2020 | 3 | 9 |
| 2021 | 3 | 5 |
| 2022 | 1 | 4 |
| 2023 | 9 | 3 |
| 2024 | 0 | 5 |
| 2025 | 2 | 3 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device12 May 2026US 12,628,361 B2Samsung Electronics Co., Ltd.
- Atomic layer deposition method3 Feb 2026US 12,540,393 B2National Taiwan University of Science and Technology
- Piezoluminescence structure, piezoelectric structure, manufacturing method thereof, and high sensitivity pressure sensor using the same17 Jun 2025US 12,336,435 B2Industry-Academic Cooperation Foundation, Yonsei University
- Reactive thermal barrier coating14 Jan 2025US 12,196,109 B2Rtx Corporation
- Dielectric thin film, integrated device including the same, and method of manufacturing the dielectric thin film21 Nov 2023US 11,824,081 B2Samsung Electronics Co., Ltd.
- Group 2 metal containing film forming compositions and vapor deposition of the films using the same10 Jul 2025US 2025/0223696 A1L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
- Process for making multicomponent perovskites26 Jun 2025US 2025/0212674 A1Oxford Photovoltaics Limited
- Multi-component thin film, method of manufacturing the same, and ic device including the multi-component thin film1 May 2025US 2025/0137123 A1Samsung Electronics Co., Ltd.
- Perovskite oxide thin film using a selective a-site atomic gradient and method of preparation thereof19 Dec 2024US 2024/0417273 A1Postech Research and Business Development Foundation
- Electrode protective layer, and preparation method therefor and use thereof26 Sep 2024US 2024/0322186 A1Shenzhen Yuansu Optoelectronics Technology Co., Ltd.
Most cited
By later US patents
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Film deposition apparatus and film deposition method738US 8,506,713 B2Tokyo Electron Limited · 2013
- Metal oxide protective layer for a semiconductor device513US 8,946,830 B2ASM IP Holdings B.V. · 2015
- Metal oxide protective layer for a semiconductor device504US 9,384,987 B2ASM IP Holding B. V. · 2016
- Gas supply device503US 8,945,306 B2Tokyo Electron Limited · 2015