Metal oxide protective layer for a semiconductor device
AssigneeASM IP Holdings B.V.
InventorSung-Hoon Jung
Life of this patent
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Abstract
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
Claims20
A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising:
- forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor,
- reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer;
- and
- forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on top of the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
A method of fabricating a semiconductor device, comprising:
- forming a halogen-sensitive high-K dielectric material on a substrate;
- forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material by reacting a metal-including active species derived from a non-halogenated metal oxide precursor with an oxygen-containing reactant;
- and
- forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
A gate assembly for a semiconductor device, comprising:
- a first dielectric layer comprising a halogen-sensitive high-K dielectric material;
- a metal oxide protective layer formed on top of the halogen-sensitive high-K dielectric material;
- and
- a film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms formed on top of the metal oxide protective layer.
Dependencies are inferred from the claim text.