Metal oxide protective layer for a semiconductor device
AssigneeASM IP Holding B.V.
InventorSung-Hoon Jung
Life of this patent
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Abstract
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
Claims20
A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
- providing a halogen-sensitive metal-including layer present on a substrate;
- forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor;
- and
- forming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
A method of fabricating a semiconductor device, the method comprising the steps of:
- forming a halogen-sensitive high-K dielectric material on a substrate;
- forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material;
- and
- forming a high-k dielectric metal-including film overlying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
- providing a halogen-sensitive metal-including layer present on a substrate;
- using atomic layer deposition, forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor;
- and
- forming a high-k dielectric metal-including film comprising residual halogen atoms overlying the metal oxide protective layer.
Dependencies are inferred from the claim text.