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US 11,824,081 B2Granted
Dielectric thin film, integrated device including the same, and method of manufacturing the dielectric thin film
AssigneeSamsung Electronics Co., Ltd.
InventorsChangsoo Lee, Sangwoon Lee, Chan Kwak, Hyungjun Kim, Euncheol Do
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Abstract
Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z <Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.
Claims27
A dielectric thin film comprising:
- an oxide including a perovskite-type crystal structure and represented by Formula 1
- A2-xB3-yO10-z <Formula 1>
- wherein in Formula 1,
- A is a divalent cation,
- B is a pentavalent cation,
- 0≤x≤0.5, 0≤y≤0.5, and 0≤z≤0.5, and
- wherein the dielectric thin film comprises impurities of at least one of halogen ions or sulfur ions such that the halogen ions or the sulfur ions comprise 0.1 at % to 0.3 at % or less of the dielectric thin film based on an analysis by X-ray fluorescence spectrometry (XRF) or X-ray photoelectron spectroscopy (XPS).
4 more elements
Dependencies are inferred from the claim text.