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US 2024/0417273 A1Published application
Perovskite oxide thin film using a selective a-site atomic gradient and method of preparation thereof
AssigneePostech Research and Business Development Foundation
InventorsDaesu LEE, Sanghyeon KIM
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Abstract
A perovskite oxide thin film comprising a compound represented by Chemical Formula 1, and has a layered perovskite structure, wherein a ratio of A′ atoms to all A-sites in one A-site (A+A′) atomic layer is different from that of three or more other A-site atomic layers in a thickness direction.
Claims16
A perovskite oxide thin film, comprising a compound represented by Chemical Formula 1, and having a layered perovskite structure,
- wherein a ratio of A′ atoms to all A-sites in one A-site (A+A′) atomic layer is different from that of three or more other A-site atomic layers in a thickness direction:
- A1-xA′xBO3 [Chemical Formula 1]
- wherein, in Chemical Formula 1,
- A and A′ are different divalent or trivalent cations,
- B is a tetravalent or trivalent cation, and
- 0≤x≤1.
3 more elements
A method of preparing a perovskite oxide thin film, comprising
- forming a perovskite oxide thin film that comprises a compound represented by Chemical Formula 1 and has a layered perovskite structure, on a substrate,
- wherein a ratio of A′ atoms to all A-sites in one A-site (A+A′) atomic layer is different from that of three or more other A-site atomic layers in a thickness direction:
- A1-xA′xBO3 [Chemical Formula 1]
- wherein, in Chemical Formula 1,
- A and A′ are different divalent or trivalent cations,
- B is a tetravalent or trivalent cation, and
- 0≤x<1.
4 more elements
Dependencies are inferred from the claim text.