C23C 16/401
Containing silicon
Official title: {containing silicon}
C23C16/401 (Containing silicon) appears on 2,867 US grants and 3,457 published applications in this corpus.
Search patents in C23C- Granted patents
- 2,867
- Published applications
- 3,457
- Assignees
- 835
- Inventors
- 6,059
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 9 | 0 |
| 1987 | 4 | 0 |
| 1988 | 8 | 0 |
| 1989 | 9 | 0 |
| 1990 | 10 | 0 |
| 1991 | 10 | 0 |
| 1992 | 9 | 0 |
| 1993 | 13 | 0 |
| 1994 | 27 | 0 |
| 1995 | 26 | 0 |
| 1996 | 27 | 0 |
| 1997 | 35 | 0 |
| 1998 | 49 | 0 |
| 1999 | 56 | 0 |
| 2000 | 88 | 0 |
| 2001 | 73 | 39 |
| 2002 | 100 | 114 |
| 2003 | 109 | 135 |
| 2004 | 86 | 127 |
| 2005 | 70 | 156 |
| 2006 | 94 | 140 |
| 2007 | 67 | 98 |
| 2008 | 75 | 106 |
| 2009 | 55 | 113 |
| 2010 | 84 | 110 |
| 2011 | 85 | 89 |
| 2012 | 60 | 90 |
| 2013 | 77 | 96 |
| 2014 | 74 | 118 |
| 2015 | 95 | 150 |
| 2016 | 96 | 140 |
| 2017 | 99 | 127 |
| 2018 | 109 | 146 |
| 2019 | 116 | 173 |
| 2020 | 126 | 182 |
| 2021 | 107 | 163 |
| 2022 | 105 | 196 |
| 2023 | 124 | 195 |
| 2024 | 116 | 178 |
| 2025 | 144 | 168 |
| 2026 | 102 | 108 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of processing substrate, recording medium, substrate processing apparatus and method of manufacturing semiconductor device6 Oct 2026US 12,757,652 B2Kokusai Electric Corporation
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium29 Sep 2026US 12,747,501 B2Kokusai Electric Corporation
- Semiconductor doping method and an intermediate semiconductor device29 Sep 2026US 12,751,221 B2Beneq Oy
- Method and apparatus for producing metallic silicon1 Oct 2026US 2026/0297732 A1Honda Motor Co., Ltd.
- Chamber-accumulation extension via in-situ passivation1 Oct 2026US 2026/0297734 A1Lam Research Corporation
- Processing method, method of manufacturing semiconductor device, recording medium, and processing apparatus1 Oct 2026US 2026/0297742 A1Kokusai Electric Corporation
- Precursors for low dielectric film deposition1 Oct 2026US 2026/0305199 A1Lam Research Corporation
- Coated structured substrates and methods of making same24 Sep 2026US 2026/0284702 A13M Innovative Properties Company
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- Anisotropic deposition of silicon dioxide805US 5,013,691 AAT&T Bell Laboratories · 1991