C23C 16/402
Silicon dioxide
Official title: {Silicon dioxide}
C23C16/402 (Silicon dioxide) appears on 1,218 US grants and 1,324 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,218
- Published applications
- 1,324
- Assignees
- 495
- Inventors
- 2,922
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 6 | 0 |
| 1983 | 5 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 8 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 7 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 7 | 0 |
| 1993 | 7 | 0 |
| 1994 | 13 | 0 |
| 1995 | 16 | 0 |
| 1996 | 18 | 0 |
| 1997 | 22 | 0 |
| 1998 | 32 | 0 |
| 1999 | 34 | 0 |
| 2000 | 48 | 0 |
| 2001 | 38 | 18 |
| 2002 | 37 | 39 |
| 2003 | 27 | 34 |
| 2004 | 25 | 37 |
| 2005 | 21 | 56 |
| 2006 | 26 | 38 |
| 2007 | 22 | 33 |
| 2008 | 24 | 28 |
| 2009 | 16 | 44 |
| 2010 | 30 | 38 |
| 2011 | 25 | 39 |
| 2012 | 26 | 37 |
| 2013 | 29 | 48 |
| 2014 | 28 | 52 |
| 2015 | 47 | 73 |
| 2016 | 39 | 61 |
| 2017 | 44 | 63 |
| 2018 | 56 | 66 |
| 2019 | 59 | 74 |
| 2020 | 54 | 77 |
| 2021 | 51 | 63 |
| 2022 | 37 | 78 |
| 2023 | 57 | 67 |
| 2024 | 46 | 67 |
| 2025 | 49 | 62 |
| 2026 | 40 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium29 Sep 2026US 12,747,501 B2Kokusai Electric Corporation
- Semiconductor doping method and an intermediate semiconductor device29 Sep 2026US 12,751,221 B2Beneq Oy
- Method for semiconductor processing8 Sep 2026US 12,733,414 B2Tokyo Electron Limited
- Film forming method and film forming apparatus8 Sep 2026US 12,733,415 B2Tokyo Electron Limited
- Chamber-accumulation extension via in-situ passivation1 Oct 2026US 2026/0297734 A1Lam Research Corporation
- Coated structured substrates and methods of making same24 Sep 2026US 2026/0284702 A13M Innovative Properties Company
- Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus24 Sep 2026US 2026/0290757 A1Kokusai Electric Corporation
- Low temperature optical waveguide device fabrication method17 Sep 2026US 2026/0275510 A1Ecole Polytechnique Federale De Lausanne (Epfl)
- Monoalkoxysilanes and dialkoxysilanes and dense organosilica films made therefrom17 Sep 2026US 2026/0275527 A1Versum Materials US, LLC
Most cited
By later US patents
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Anisotropic deposition of silicon dioxide805US 5,013,691 AAT&T Bell Laboratories · 1991
- Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process777US 5,000,113 AAPPLIED Materials.Inc. · 1991
- Sequential gas flow oxide deposition technique615US 7,399,388 B2APPLIED Materials.Inc. · 2008
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015