Low temperature optical waveguide device fabrication method
AssigneeEcole Polytechnique Federale De Lausanne (Epfl)
InventorsZheru QIU, Zihan LI, Tobias KIPPENBERG
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Abstract
The present invention concerns an optical waveguide device (1) fabrication method comprising providing at least one optical waveguide or optical waveguide core (3); and depositing at least one silicon dioxide layer or material (15) onto the at least one optical waveguide or optical waveguide core (3) to form a cladding or passivation layer of the optical waveguide device (1). The at least one silicon dioxide layer or material (15) is deposited by plasma-enhanced chemical vapor deposition using precursors comprising or consisting of silicon tetrachloride and at least one oxidizer, the plasma being an inductively coupled plasma.
Claims20
Optical waveguide device fabrication method, the method comprising:
- providing at least one of an optical waveguide and an optical waveguide core;
- depositing at least one layer and/or material comprising silicon dioxide onto the at least one of the optical waveguide and the optical waveguide core to form a cladding and/or passivation layer of the optical waveguide device,
- wherein the at least one of the optical waveguide and the optical waveguide core comprises at least one of silicon nitride, lithium niobate, lithium tantalate, barium titanate, gallium phosphide, aluminum oxide, and aluminum gallium arsenide;
- wherein the at least one layer and/or material comprising silicon dioxide is deposited by plasma-enhanced chemical vapor deposition using precursors comprising or consisting of silicon tetrachloride and at least one oxidizer, the plasma being an inductively coupled plasma.
20-22. (canceled)
Dependencies are inferred from the claim text.