H10W 20/216
Characterised by dielectric material at least partially filling the via holes
Official title: {characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes}
H10W20/216 (Characterised by dielectric material at least partially filling the via holes) appears on 495 US grants and 581 published applications in this corpus.
Search patents in H10W- Granted patents
- 495
- Published applications
- 581
- Assignees
- 147
- Inventors
- 764
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 5 |
| 2003 | 0 | 3 |
| 2004 | 6 | 6 |
| 2005 | 3 | 10 |
| 2006 | 6 | 33 |
| 2007 | 7 | 23 |
| 2008 | 8 | 14 |
| 2009 | 15 | 23 |
| 2010 | 19 | 30 |
| 2011 | 24 | 51 |
| 2012 | 25 | 38 |
| 2013 | 38 | 27 |
| 2014 | 51 | 35 |
| 2015 | 31 | 30 |
| 2016 | 36 | 37 |
| 2017 | 36 | 33 |
| 2018 | 35 | 32 |
| 2019 | 24 | 24 |
| 2020 | 29 | 21 |
| 2021 | 14 | 19 |
| 2022 | 20 | 26 |
| 2023 | 19 | 21 |
| 2024 | 15 | 20 |
| 2025 | 16 | 11 |
| 2026 | 8 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Through-substrate-via in photosensitive module25 Aug 2026US 12,720,900 B2Semiconductor Components Industries, LLC
- Semiconductor device with through hole electrode wiring9 Jun 2026US 12,653,012 B2Sony Semiconductor Solutions Corporation
- Through substrate via landing on front end of line structure19 May 2026US 12,635,499 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High density three-dimensional integrated capacitors5 May 2026US 12,622,003 B2Adeia Semiconductor Solutions LLC
- Method for assembling EIC to PIC to build an optical engine5 May 2026US 12,622,311 B2Avago Technologies International Sales Pte. Limited
- Semiconductor device30 Jul 2026US 2026/0223420 A1Micron Technology, Inc.
- Semiconductor device and method of manufacturing semiconductor device2 Jul 2026US 2026/0190973 A1Sony Semiconductor Solutions Corporation
- Semiconductor structure, manufacturing method therefor, and electronic device25 Jun 2026US 2026/0182322 A1Huawei Technologies Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device4 Jun 2026US 2026/0157165 A1
- Semiconductor device with lens region23 Apr 2026US 2026/0114257 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of bonding wafers having vias including conductive material314US 5,646,067 AHarris Corporation · 1997
- System for interconnecting stacked integrated circuits280US 5,682,062 AHarris Corporation · 1997
- Intergrated circuit with coaxial isolation and method258US 5,814,889 AHarris Corporation · 1998
- Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias233US 7,345,350 B2Micron Technology, Inc. · 2008
- Surface mountable integrated circuit with conductive vias206US 5,608,264 AHarris Corporation · 1997