Through-substrate-via in photosensitive module
AssigneeSemiconductor Components Industries, LLC
InventorsMing-Yao Chen, Chien-Wei Chang, Chih-Hung Tu
Life of this patent
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Abstract
A package includes an optical sensor die. The optical sensor die has an optically active surface area (OASA) disposed on a front side of a substrate. A glass cover is disposed above the OASA and attached to the front side the substrate by a dam material. A through-substrate via (TSV) extends from an opening at a back side of the substrate toward a front side of the substrate. The TSV has a stepped bottom surface at the front side of the substrate. The TSV provides access for electrical connections between the back side of the substrate and the front side of the substrate.
Claims22
A semiconductor die, comprising:
- a substrate including a semiconductor device;
- a through-substrate via (TSV) extending from an opening at a back side of the substrate to an inter dielectric layer (IDL) on a front side of the substrate, the TSV having a stepped bottom surface at the front side of the substrate, the stepped bottom surface including a well portion defined by an opening in the IDL that exposes a metal contact pad, and a step portion extending outwardly from edges of the well portion, the step portion including a portion of the IDL;
- a passivation layer disposed on a sidewall of the TSV including a sidewall of the well portion and on a back side of the substrate;
- and
- a metal layer deposited on the passivation layer and forming an electrical connection from the back side of the substrate to the metal contact pad.
A package, comprising:
- an optical sensor die, the optical sensor die including an optically active surface area (OASA) disposed on a front side of a substrate;
- a glass cover disposed above the OASA and attached to the front side the substrate by a dam material;
- a through-substrate via (TSV) extending from an opening at a back side of the substrate to an inter dielectric layer (IDL) on a front side of the substrate, the TSV having a stepped bottom surface at the front side of the substrate, the stepped bottom surface including a well portion defined by an opening in the IDL that exposes a metal contact pad, and a step portion extending outwardly from edges of the well portion, the step portion including a portion of the IDL
- a passivation layer disposed on a sidewall of the TSV including a sidewall of the well portion and on a back side of the substrate;
- and
- a metal layer deposited on the passivation layer and forming an electrical connection from the back side of the substrate to the metal contact pad.
A method comprising:
- etching a trench through a semiconductor substrate from a back side of the semiconductor substrate, the trench extending from the back side of the semiconductor substrate to a front side of the semiconductor substrate;
- etching, through the trench, an opening in a first inter dielectric layer (IDL) disposed on the front side of the semiconductor substrate, the opening exposing a portion of a contact pad included in a second IDL disposed over the first IDL and forming a central portion of a bottom surface of the trench;
- and
- etching, through the trench, semiconductor material overlying an unetched portion of the first IDL along a perimeter of the opening to form a raised portion of the bottom surface of the trench.
Dependencies are inferred from the claim text.