Semiconductor device with through hole electrode wiring
AssigneeSony Semiconductor Solutions Corporation
InventorsTakushi Shigetoshi, Yoshiaki Yanagawa
Life of this patent
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Abstract
In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the first through hole penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film. Furthermore, in the semiconductor device, the first inner through electrode is formed along a part of the side wall of the first through hole.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a wiring layer formed on a front surface of the semiconductor substrate;
- a first through hole that penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film;
- a first inner through electrode formed along a part of the side wall of the first through hole;
- an external terminal formed on the back surface;
- and
- a back surface wiring line having one end connected to the external terminal and another end connected to the first inner through electrode.
A semiconductor device, comprising:
- a semiconductor substrate;
- a wiring layer formed on a front surface of the semiconductor substrate;
- a first through hole that penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film;
- and
- a first inner through electrode formed along a part of the side wall of the first through hole,
- wherein-the first inner through electrode is formed at each of a plurality of places of the side wall of the first through hole.
A semiconductor device, comprising:
- a semiconductor substrate;
- a wiring layer formed on a front surface of the semiconductor substrate;
- a first through hole that penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film;
- and
- a first inner through electrode formed along a part of the side wall of the first through hole,
- wherein a shape of the through hole is an ellipse when viewed from a direction perpendicular to the back surface, and the first inner through electrode is formed on a minor axis of the ellipse.
Dependencies are inferred from the claim text.