Through substrate via landing on front end of line structure

An integrated circuit device, comprising:

• a substrate having a first side and a second side;
• a through substrate via extending from the second side to the first side, wherein the through substrate via has a back end at the second side and a front end at the first side and the front end is notched;
• a metal interconnect structure on the first side, wherein the metal interconnect structure comprises wires arranged in a plurality of metallization layers;
• and
• a metal coupling structure disposed between the metal interconnect structure and the front end;
• wherein the through substrate via is coupled to the metal interconnect structure through the metal coupling structure.

A method of manufacturing an integrated circuit device, the method comprising:

• providing a semiconductor body, wherein the semiconductor body has a first side and a second side;
• forming a dummy gate stack;
• patterning the dummy gate stack to form dummy gates;
• forming spacers around the dummy gates;
• filling an area between the spacers with an isolation dielectric;
• performing a gate replacement process to replace the dummy gates with high-κ metal gates comprising a gate electrode metal;
• planarizing the isolation dielectric and the high-κ metal gates;
• forming a first interlevel dielectric layer over the isolation dielectric and the high-κ metal gates;
• etching trenches through the first interlevel dielectric layer, wherein the trenches extend into the isolation dielectric;
• filling the trenches with a first metal, wherein the first metal forms a first metal structure in a TSV landing area;
• forming a second interlevel dielectric layer over the first interlevel dielectric layer;
• etching holes in the second interlevel dielectric layer;
• filling the holes with a second metal, wherein the second metal forms a first via contacting the first metal structure;
• forming a metal interconnect structure on the first side, wherein the metal interconnect structure includes the first via;
• etching a through substrate hole from the second side, wherein the first metal structure is exposed in the through substrate hole;
• and
• depositing a third metal in the through substrate hole, wherein the third metal in the through substrate hole forms a through substrate via that contacts the first metal structure.