High density three-dimensional integrated capacitors

A microelectronic element, comprising:

• a substrate having an upper planar surface, an opposite lower planar surface, and a side surface, wherein the upper planar surface comprises a circuit element and wherein the upper planar surface and the lower planar surface are perpendicular to the side surface;
• a first dielectric layer at least partially disposed in the substrate between the upper planar surface and the lower planar surface, the first dielectric layer comprising an undulating shape that has a first side and an opposite second side, wherein the undulating shape extends downwardly with respect to the upper planar surface and extends upwardly with respect to the lower planar surface when viewed from a perspective of the side surface;
• a first electrically conductive layer disposed on the first side of the first dielectric layer, wherein the first electrically conductive layer conforms to the undulating shape of the first dielectric layer;
• a second electrically conductive layer and a third electrically conductive layer disposed on the second side of the first dielectric layer, wherein the second and third electrically conductive layers conform to the undulating shape of the first dielectric layer;
• a second dielectric layer disposed between the second electrically conductive layer and the third electrically conductive layer;
• and
• a plurality of first electrodes electrically connected to the first electrically conductive layer, a second electrode electrically connected to the second electrically conductive layer, and a third electrode electrically connected to the third electrically conductive layer.