Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprising a through electrode having a resin ISO structure using a ring TSV, the through-electrode including:

• a blind hole formed by excavating a semiconductor substrate to a metal pad laminated on an insulating layer;
• a photosensitive insulating film covering an upper surface of the semiconductor substrate and an inner peripheral surface of the blind hole;
• and
• a conductive metal covering the insulating film, wherein the ring TSV is formed such that a semiconductor layer is interposed between the insulating film and the conductive metal.

A method for manufacturing a semiconductor device having a resin ISO structure using a ring TSV, comprising:

• removing a resist applied to an upper surface of a semiconductor substrate in a substantially ring shape in plan view by ring TSV lithography;
• performing ring TSV etching on a portion from which the resist has been removed to form a ring through-hole having a substantially cylindrical shape in plan view;
• applying an insulating film to the upper surface of the semiconductor substrate in which the ring through-hole is formed, and filling an insulating film in the ring through-hole;
• forming an opening of the ring through-hole into a predetermined shape by lithography;
• removing a semiconductor pillar formed by being surrounded by the insulating film filled in the ring through-hole by TSV etching to form a through-hole;
• and
• forming a through-electrode by covering an inner peripheral surface of the through-hole with a conductive material.