US 2026/0190973 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

An increase in over-etching during forming of a through hole is reduced while a semiconductor substrate is thickened. A semiconductor device includes a semiconductor layer, an insulating layer, a semiconductor substrate, a wiring layer, an insulating separation layer, a through electrode, and an insulating film. A semiconductor element is formed on the semiconductor layer. The semiconductor layer is laminated on the insulating layer. The insulating layer is laminated on the semiconductor substrate. The wiring layer is formed on the semiconductor layer. The insulating separation layer penetrates the semiconductor layer, reaches the insulating layer, and insulates and separates the semiconductor element. The through electrode penetrates the semiconductor substrate, the insulating layer, and the semiconductor layer, is connected to the wiring layer, and is surrounded by the insulating separation layer at a penetrating position of the semiconductor layer. The insulating film penetrates the semiconductor substrate, reaches the insulating layer, and is positioned between the semiconductor substrate and the through electrode.

Claims10

Dependent claims

A semiconductor device comprising:

a semiconductor layer on which a semiconductor element is formed;
an insulating layer on which the semiconductor layer is laminated;
a semiconductor substrate on which the insulating layer is laminated;
a wiring layer formed on the semiconductor layer;
an insulating separation layer that penetrates the semiconductor layer, reaches the insulating layer, and insulates and separates a part of the semiconductor layer;
a through electrode that penetrates the semiconductor substrate, the insulating layer, and the semiconductor layer, is connected to the wiring layer, and is surrounded by the insulating separation layer at a penetrating position of the semiconductor layer;
and
an insulating film that penetrates the semiconductor substrate, reaches the insulating layer, and is positioned between the semiconductor substrate and the through electrode.

5 more elements

A method for manufacturing a semiconductor device, comprising:

a step of forming an insulating separation layer that penetrates a semiconductor layer laminated on a semiconductor substrate with an insulating layer interposed between the semiconductor layer and the semiconductor substrate and reaches the insulating layer;
a step of forming a semiconductor element on the semiconductor layer;
a step of forming a first wiring layer connected to the semiconductor element on the semiconductor layer;
a step of forming a first through hole that penetrates the semiconductor substrate and reaches the insulating layer in the semiconductor substrate;
a step of forming an insulating film on a side wall of the first through hole;
a step of forming a second through hole that reaches the semiconductor layer through the first through hole in the insulating layer;
a step of forming a third through hole that reaches the first wiring layer through the first through hole and the second through hole in the semiconductor layer;
and
a step of embedding a through electrode surrounded by the insulating separation layer, the insulating layer, and the insulating film in the first through hole, the second through hole, and the third through hole.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Abstract

Claims10