H10W 20/085
Involving intermediate temporary filling with material
Official title: {involving intermediate temporary filling with material}
H10W20/085 (Involving intermediate temporary filling with material) appears on 1,424 US grants and 1,510 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,424
- Published applications
- 1,510
- Assignees
- 213
- Inventors
- 2,346
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 10 | 0 |
| 2000 | 16 | 0 |
| 2001 | 45 | 24 |
| 2002 | 76 | 68 |
| 2003 | 68 | 71 |
| 2004 | 85 | 127 |
| 2005 | 57 | 124 |
| 2006 | 69 | 98 |
| 2007 | 88 | 111 |
| 2008 | 69 | 98 |
| 2009 | 72 | 81 |
| 2010 | 77 | 52 |
| 2011 | 63 | 51 |
| 2012 | 38 | 47 |
| 2013 | 53 | 33 |
| 2014 | 48 | 32 |
| 2015 | 34 | 38 |
| 2016 | 53 | 47 |
| 2017 | 45 | 41 |
| 2018 | 34 | 45 |
| 2019 | 53 | 51 |
| 2020 | 51 | 69 |
| 2021 | 54 | 48 |
| 2022 | 33 | 41 |
| 2023 | 37 | 39 |
| 2024 | 35 | 35 |
| 2025 | 28 | 29 |
| 2026 | 14 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Interconnection structure, semiconductor device with interconnection structure and method for fabricating the same24 Sep 2026US 2026/0293652 A1SK hynix Inc.
- Semiconductor device and method of manufacturing the same20 Aug 2026US 2026/0247718 A1Ablic Inc.
- Damascene processes30 Jul 2026US 2026/0223653 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
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- Method of depositing low dielectric constant silicon carbide layers258US 6,537,733 B2APPLIED Materials.Inc. · 2003