Interconnection structure, semiconductor device with interconnection structure and method for fabricating the same

A semiconductor device comprising:

• a first interconnection extending in a first direction over a substrate;
• a first contact connecting the first interconnection and the substrate;
• a second interconnection formed over the first interconnection, in direct contact with a portion of the first interconnection and extending in a second direction which is different from the first direction;
• a third interconnection formed over the second interconnection and extending in a third direction which is different from the first and second directions;
• and
• a second contact of which both ends are in direct contact with the second interconnection and the third interconnection,
• wherein the first contact is vertically aligned with the second contact,
• wherein a top surface of the first interconnection and a bottom surface of the second interconnection are located at a same level,
• wherein the sidewalls of the first and second contacts are vertically aligned in a cross-sectional view, and
• wherein the vertical alignment of the sidewalls of the first and second contacts reduces parasitic capacitance and improves signal integrity.