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US 12,721,142 B2Granted
Isolated super via to middle metal line level
AssigneeInternational Business Machines Corporation
InventorsKoichi Motoyama, Ruilong Xie, Nicholas Anthony Lanzillo
Life of this patent
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Abstract
One or more systems, devices, and/or methods of fabrication provided herein relate to isolated self-aligned super vias. According to one embodiment, a super via device can comprise a super via structure, a metallic line and a dielectric fill material located between the sidewalls of the super via structure and the metallic line.
Claims17
A super via device comprising:
- a super via structure comprising a first sidewall and a second sidewall, wherein the first sidewall comprises a first set of two or more sidewall angles and the second sidewall comprises a second set of two or more sidewall angles;
- a metallic line;
- and
- a dielectric fill material located between sidewalls of the super via structure and the metallic line.
1 more element
A method for fabricating a semiconductor device by a fabrication system, the method comprising:
- forming, by the fabrication system, a wafer comprising a metallic line;
- patterning, by the fabrication system, a channel through the metallic line;
- filling, by the fabrication system, the channel with a dielectric fill material;
- patterning, by the fabrication system, a second channel through the dielectric fill material;
- and
- forming, by the fabrication system, a super via structure in the second channel wherein the super via structure comprises a first sidewall and a second sidewall, wherein the first sidewall comprises a first set of two or more sidewall angles and the second sidewall comprises a second set of two or more sidewall angles.
3 more elements
A method for fabricating a semiconductor device by a fabrication system, the method comprising:
- forming, by the fabrication system, a wafer comprising a metallic line;
- etching, by the fabrication system, a first portion of a first channel from a top layer of the wafer to the metallic line;
- etching, by the fabrication system, a second portion of the first channel through the metallic line, wherein the second portion of the first channel comprises a width greater than the first portion of the first channel;
- filling, by the fabrication system, the first channel with a dielectric fill material;
- etching, by the fabrication system, a second channel through the dielectric fill material, wherein the second channel comprises a width less than the width of the second portion of the first channel;
- and
- forming, by the fabrication system, a super via structure in the second channel, wherein the super via structure comprises a first sidewall and a second sidewall, wherein the first sidewall comprises a first set of two or more sidewall angles and the second sidewall comprises a second set of two or more sidewall angles.
4 more elements
Dependencies are inferred from the claim text.