H10W 20/066
By forming silicides of refractory metals
Official title: {by forming silicides of refractory metals}
H10W20/066 (By forming silicides of refractory metals) appears on 702 US grants and 535 published applications in this corpus.
Search patents in H10W- Granted patents
- 702
- Published applications
- 535
- Assignees
- 155
- Inventors
- 1,172
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 8 | 0 |
| 1985 | 9 | 0 |
| 1986 | 13 | 0 |
| 1987 | 8 | 0 |
| 1988 | 7 | 0 |
| 1989 | 7 | 0 |
| 1990 | 12 | 0 |
| 1991 | 10 | 0 |
| 1992 | 9 | 0 |
| 1993 | 20 | 0 |
| 1994 | 17 | 0 |
| 1995 | 21 | 0 |
| 1996 | 13 | 0 |
| 1997 | 18 | 0 |
| 1998 | 10 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 10 | 7 |
| 2002 | 19 | 23 |
| 2003 | 15 | 20 |
| 2004 | 19 | 16 |
| 2005 | 15 | 22 |
| 2006 | 13 | 18 |
| 2007 | 13 | 14 |
| 2008 | 7 | 17 |
| 2009 | 10 | 8 |
| 2010 | 14 | 10 |
| 2011 | 12 | 7 |
| 2012 | 8 | 5 |
| 2013 | 4 | 15 |
| 2014 | 16 | 14 |
| 2015 | 22 | 27 |
| 2016 | 26 | 33 |
| 2017 | 32 | 37 |
| 2018 | 31 | 45 |
| 2019 | 44 | 43 |
| 2020 | 38 | 35 |
| 2021 | 23 | 35 |
| 2022 | 34 | 28 |
| 2023 | 26 | 18 |
| 2024 | 21 | 15 |
| 2025 | 14 | 14 |
| 2026 | 5 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Conductive feature formation and structure17 Feb 2026US 12,557,568 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation process for CMOS devices10 Feb 2026US 12,550,416 B2APPLIED Materials.Inc.
- High aspect ratio via fill process employing selective metal deposition and structures formed by the same13 Jan 2026US 12,525,487 B2SanDisk Technologies LLC
- Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure24 Sep 2026US 2026/0293268 A1Samsung Electronics Co., Ltd.
- Integrated junction silicide and selective metal capping with pullback24 Sep 2026US 2026/0293633 A1
- Conductive feature formation and structure18 Jun 2026US 2026/0173778 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof7 May 2026US 2026/0129970 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation process for cmos devices5 Mar 2026US 2026/0068287 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Integrated circuit device having improved junction connections244US 5,121,186 AHewlett-Packard Company · 1992
- Semiconductor circuit constructions220US 6,927,431 B2Micron Technology, Inc. · 2005
- Selective refractory metal and nitride capping219US 6,844,258 B1Novellus Systems, Inc. · 2005
- Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same215US 5,392,189 AMicron Semiconductor, Inc. · 1995
- Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors203US 4,510,670 ASiemens Aktiengesellschaft · 1985