US 5,121,186 A · Integrated circuit device having improved junction connections

Abstract

A method for forming a contact to a selective region of an integrated circuit characterized by the steps of: forming a layer of refractory metal over and around the selected region; forming a layer of amorphous silicon over the layer of refractory metal; patterning the amorphous silicon in to an elongated strip which extends away from the selected region; annealing the integrated circuit to convert the strip of amorphous silicon into a silicide path; and removing the unreacted refractory metal. The method of the present invention can be used to extend a contact to the source, drain, or gate of a MOSFET from the top of an adjacent section of field oxide, and can also be used as a method for local interconnection of IC devices, such as CMOS devices.

Claims10

Dependent claims

A MOSFET device comprising a substrate, two field oxide sections on the substrate;

spaced-apart source and drain regions on the substrate between the oxide sections;
and a metal silicide strip having an extremity embedded in and integral with one of the source and drain regions, the strip defining a conductive path between said region and a contact location of an adjacent one of the oxide sections, the strip being deposited directly on, and in intimate physical contact with said region and said oxide section for substantially the entire length of the strip from said extremity to said contact location.

Dependencies are inferred from the claim text.

Facts

Application

07/601,037Filed 23 Oct 1990 · continuation

Priority

15 Jun 1984

Granted

9 Jun 1992

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 30/0212
Of FETs having insulated gates [IGFET]: using self-aligned silicidation
H10D 64/011
Manufacture or treatment: of electrodes ohmically coupled to a semiconductor
H10W 20/066
By modifying the conductivity of conductive parts, e.g. by alloying: by forming silicides of refractory metals
H10W 20/0698
Of conductive parts of the interconnections: local interconnections

Integrated circuit device having improved junction connections

Life of this patent

Integrated circuit device having improved junction connections

Life of this patent

Abstract

Claims10