Conductive feature formation and structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Wei Chang, Min-Hsiu Hung, Hung-Yi Huang, Chun Chieh Wang, Yu-Ting Lin
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Abstract
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
Claims20
A semiconductor device comprising:
- a first gate stack over a substrate;
- a second gate stack over the substrate;
- a source/drain region extending between the first gate stack and the second gate stack;
- a silicide material over a substrate, the silicide material being in contact with both the source/drain region and a chlorine containing layer, the chlorine containing layer being a single material;
- a conductive fill material extending between the first gate stack and the second gate stack, the conductive fill material sharing a co-planar surface with the chlorine containing layer;
- and
- a dielectric material surrounding and in contact with at least a portion of the chlorine containing layer.
A semiconductor device comprising:
- a first dielectric material surrounding multiple gate stacks;
- a second dielectric material overlying the first dielectric material;
- a conductive fill material extending through the second dielectric material and the first dielectric material between two of the multiple gate stacks, the conductive fill material sharing a single planar surface with the second dielectric material;
- a layer in contact with each surface of the conductive fill material except for the single planar surface;
- and
- a silicide material in contact with each of the layer, the first dielectric material, and a source/drain region.
A semiconductor device comprising:
- a layer of titanium nitride comprising residual chlorine;
- a plurality of dielectric materials on a first side of the layer of titanium nitride, at least one of the plurality of dielectric materials being located between a first gate stack and a second gate stack;
- cobalt on an opposite side of the layer of titanium nitride from the plurality of dielectric materials;
- and
- titanium silicide in contact with the layer of titanium nitride and a source/drain region, the source/drain region being adjacent to the first gate stack.
Dependencies are inferred from the claim text.