Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHUNG-TE LIN
Life of this patent
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Abstract
A semiconductor structure includes a substrate having a first doping type, a first conductive structure disposed within the substrate and having a bottom portion and a sidewall portion disposed over and coupled to the bottom portion, a first isolation layer disposed under the first conductive structure and within the substrate, and a semiconductor device disposed over the first conductive structure and including an oxide layer disposed over a first surface of the substrate. The first conductive structure is partially enclosed by the oxide layer and the first isolation layer, at least a portion of the semiconductor device is surrounded by the sidewall portion of the first conductive structure, and the semiconductor device is separated from the first conductive structure.
Claims20
A semiconductor structure, comprising:
- a substrate having a first doping type;
- a first conductive structure disposed within the substrate and having a bottom portion and a sidewall portion disposed over and coupled to the bottom portion;
- a first isolation layer disposed under the first conductive structure and within the substrate;
- and
- a semiconductor device disposed over the first conductive structure and including an oxide layer disposed over a first surface of the substrate,
- wherein the first conductive structure is partially enclosed by the oxide layer and the first isolation layer, at least a portion of the semiconductor device is surrounded by the sidewall portion of the first conductive structure, and the semiconductor device is separated from the first conductive structure.
A semiconductor structure, comprising:
- a substrate having a surface;
- a conductive structure disposed within the substrate and having a first bottom portion, a first sidewall portion disposed over and coupled to the first bottom portion, and a first upper portion coupled to the first sidewall portion and exposed through the surface;
- and
- a semiconductor device disposed over and electrically connected to the conductive structure,
- wherein the first sidewall portion is disposed between the first bottom portion and the upper portion, and at least a portion of the semiconductor device is surrounded by the first sidewall portion of the conductive structure in a plan view.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate having a surface;
- forming a recess on the surface of the substrate;
- forming a conductive structure within and conformal to the recess;
- forming a semiconductor material layer in the recess and over the conductive structure;
- doping the semiconductor material layer to form a doped semiconductor material layer;
- and
- forming a semiconductor device over the doped semiconductor material layer, wherein the semiconductor device is electrically connected to the conductive structure,
- wherein at least a portion of the semiconductor device is surrounded by the conductive structure.
Dependencies are inferred from the claim text.