H10W 20/064
By modifying the conductivity of conductive parts
Official title: {by modifying the conductivity of conductive parts, e.g. by alloying}
H10W20/064 (By modifying the conductivity of conductive parts) appears on 2,130 US grants and 1,631 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,130
- Published applications
- 1,631
- Assignees
- 397
- Inventors
- 3,414
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 9 | 0 |
| 1978 | 8 | 0 |
| 1979 | 6 | 0 |
| 1980 | 5 | 0 |
| 1981 | 13 | 0 |
| 1982 | 14 | 0 |
| 1983 | 9 | 0 |
| 1984 | 18 | 0 |
| 1985 | 16 | 0 |
| 1986 | 20 | 0 |
| 1987 | 22 | 0 |
| 1988 | 14 | 0 |
| 1989 | 28 | 0 |
| 1990 | 29 | 0 |
| 1991 | 24 | 0 |
| 1992 | 24 | 0 |
| 1993 | 35 | 0 |
| 1994 | 45 | 0 |
| 1995 | 46 | 0 |
| 1996 | 31 | 0 |
| 1997 | 36 | 0 |
| 1998 | 37 | 0 |
| 1999 | 32 | 0 |
| 2000 | 50 | 0 |
| 2001 | 51 | 30 |
| 2002 | 108 | 99 |
| 2003 | 83 | 87 |
| 2004 | 82 | 81 |
| 2005 | 63 | 87 |
| 2006 | 51 | 79 |
| 2007 | 57 | 60 |
| 2008 | 46 | 62 |
| 2009 | 35 | 40 |
| 2010 | 56 | 48 |
| 2011 | 42 | 24 |
| 2012 | 38 | 33 |
| 2013 | 33 | 40 |
| 2014 | 47 | 56 |
| 2015 | 56 | 68 |
| 2016 | 60 | 76 |
| 2017 | 79 | 78 |
| 2018 | 79 | 90 |
| 2019 | 87 | 90 |
| 2020 | 90 | 88 |
| 2021 | 78 | 84 |
| 2022 | 61 | 60 |
| 2023 | 59 | 59 |
| 2024 | 45 | 45 |
| 2025 | 43 | 39 |
| 2026 | 27 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Higher pressure purge for impurity reduction in radical treatment chamber8 Sep 2026US 12,731,769 B2APPLIED Materials.Inc.
- Isolated super via to middle metal line level25 Aug 2026US 12,721,142 B2International Business Machines Corporation
- Communication generation using sparse indicators and sensor data11 Aug 2026US 12,705,311 B2Color Health, Inc.
- Air bridge structure and manufacturing method thereof, and superconducting quantum chip and manufacturing method thereof11 Aug 2026US 12,707,962 B2Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano) , Chinese Academy of Sciences
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314374 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Higher pressure purge for impurity reduction in radical treatment chamber1 Oct 2026US 2026/0302143 A1APPLIED Materials.Inc.
- Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure24 Sep 2026US 2026/0293268 A1Samsung Electronics Co., Ltd.
- Integrated junction silicide and selective metal capping with pullback24 Sep 2026US 2026/0293633 A1
- Metal oxide layered structure and methods of forming the same10 Sep 2026US 2026/0271682 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer534US 7,335,611 B2APPLIED Materials.Inc. · 2008
- Integrated circuit and manufacturing method of copper germanide and copper silicide as copper capping layer474US 7,858,519 B2Imec · 2010
- Method of making programmable low impedance interconnect diode element444US 4,876,220 AActel Corporation · 1989
- Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH437US 6,482,740 B2ASM Microchemistry Oy · 2002