Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Pang KUO, Kuei-Wen HUANG, Chih-Han TSENG, Chia-Han LAI, Ya-Lien LEE, Hung-Wen SU, Harry CHIEN
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Abstract
A method includes forming a semiconductor device over a substrate, and forming an interconnect structure over the semiconductor device. The interconnect structure includes a metal plug including a first metal disposed in a first dielectric layer. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer has an opening therein exposing the metal plug. A nitridation process is performed on the metal plug to form a nitridation layer on the metal plug.
Claims19
A method, comprising:
- forming a semiconductor device over a substrate;
- forming an interconnect structure over the semiconductor device,
- wherein the interconnect structure includes a metal plug comprising a first metal disposed in a first dielectric layer;
- forming a second dielectric layer over the first dielectric layer, the second dielectric layer having an opening therein exposing the metal plug;
- and
- performing a nitridation process on the metal plug to form a nitridation layer on the metal plug.
The method according to claim 1, further comprising forming a barrier layer and a fill layer in the opening.
- The method according to claim 3, further comprising planarizing the barrier layer and the fill layer.
A method of manufacturing a semiconductor device, comprising:
- forming at least one transistor including at least one channel region, at least one gate dielectric layer, at least one gate electrode layer, and at least one source/drain region over a substrate,
- wherein the at least one gate dielectric layer has a first dielectric constant k1;
- forming a first dielectric layer having a second dielectric constant k2 over the at least one transistor,
- wherein k1>k2;
- forming a via in the first dielectric layer;
- forming a metal plug including a first metal in the via;
- performing a nitridation process on the metal plug;
- and
- forming a conductive contact electrically connected to the metal plug over the metal plug.
A structure, comprising:
- a semiconductor device disposed on a substrate;
- a metal plug in a first dielectric layer disposed over the semiconductor device,
- wherein the metal plug includes an inner layer including a first metal and an outer layer comprising a nitride of the first metal;
- an etch stop layer disposed over the first dielectric layer;
- and
- a second dielectric layer having an opening disposed over the first dielectric layer,
- wherein the opening is filled with a barrier layer and a fill layer comprising a different material than the barrier layer embedded in the barrier layer, and
- the etch stop layer is thinner than first dielectric layer or the second dielectric layer.
Dependencies are inferred from the claim text.