H10W 20/065
By making at least a portion of the conductive part non-conductive
Official title: {by making at least a portion of the conductive part non-conductive, e.g. by oxidation}
H10W20/065 (By making at least a portion of the conductive part non-conductive) appears on 641 US grants and 451 published applications in this corpus.
Search patents in H10W- Granted patents
- 641
- Published applications
- 451
- Assignees
- 184
- Inventors
- 1,126
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 8 | 0 |
| 1982 | 8 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 8 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 9 | 0 |
| 1994 | 15 | 0 |
| 1995 | 17 | 0 |
| 1996 | 13 | 0 |
| 1997 | 11 | 0 |
| 1998 | 20 | 0 |
| 1999 | 17 | 0 |
| 2000 | 25 | 0 |
| 2001 | 21 | 12 |
| 2002 | 54 | 50 |
| 2003 | 36 | 41 |
| 2004 | 38 | 26 |
| 2005 | 24 | 34 |
| 2006 | 19 | 31 |
| 2007 | 19 | 20 |
| 2008 | 18 | 16 |
| 2009 | 9 | 13 |
| 2010 | 10 | 13 |
| 2011 | 15 | 7 |
| 2012 | 15 | 7 |
| 2013 | 7 | 5 |
| 2014 | 8 | 10 |
| 2015 | 9 | 13 |
| 2016 | 11 | 12 |
| 2017 | 12 | 10 |
| 2018 | 19 | 21 |
| 2019 | 15 | 13 |
| 2020 | 18 | 22 |
| 2021 | 24 | 19 |
| 2022 | 13 | 15 |
| 2023 | 11 | 15 |
| 2024 | 11 | 12 |
| 2025 | 7 | 8 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming copper interconnect structure with manganese barrier layer14 Jul 2026US 12,685,112 B2Adeia Semiconductor Solutions LLC
- Metal oxide layered structure and methods of forming the same19 May 2026US 12,635,484 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low-resistance copper interconnects17 Feb 2026US 12,557,631 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming an abrasive slurry and methods for chemical-mechanical polishing10 Feb 2026US 12,550,695 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor devices and semiconductor devices9 Dec 2025US 12,494,366 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal oxide layered structure and methods of forming the same10 Sep 2026US 2026/0271682 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method manufacturing the same28 May 2026US 2026/0150381 A1Samsung Electronics Co., Ltd.
- Methods of forming an abrasive slurry and methods for chemical-mechanical polishing21 May 2026US 2026/0144031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low-resistance copper interconnects21 May 2026US 2026/0144043 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor manufacturing tool19 Mar 2026US 2026/0082858 A1
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Reduced contact area of sidewall conductor392US 6,429,064 B1Intel Corporation · 2002
- Reduced contact area of sidewall conductor390US 6,597,009 B2Intel Corporation · 2003
- Utilizing atomic layer deposition for programmable device389US 6,511,867 B2Ovonyx, Inc. · 2003
- Semiconductor device328US 5,990,542 ASemiconductor Energy Laboratory Co.Ltd. · 1999