Methods of forming an abrasive slurry and methods for chemical-mechanical polishing

A method of manufacturing a semiconductor device, the method comprising:

• filling an opening in a dielectric layer with ruthenium, the ruthenium being physically coupled to a ruthenium plug of an active device;
• transforming a portion of the ruthenium to ruthenium oxide, wherein the transforming the portion of the ruthenium forms ruthenium hydroxide as a byproduct;
• removing the ruthenium oxide with a first process;
• and
• removing the ruthenium and the dielectric layer in a second process at a substantially same rate.

A method of manufacturing a semiconductor device, the method comprising:

• forming an opening in a dielectric layer over a semiconductor substrate, the opening exposing a ruthenium conductive region physically connected to a source/drain region of an active device;
• overfilling the opening with ruthenium;
• and
• chemical mechanical polishing the ruthenium using multiple platens, wherein during the chemical mechanical polishing ruthenium hydroxide is created and wherein during the chemical mechanical polishing on at least one of the multiple platens the ruthenium and the dielectric layer are removed at a substantially same rate.