Back to results
US 12,494,366 B2Granted
Method of manufacturing semiconductor devices and semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Ming Chang, Yu-Tse Lai, Yu-Fu Wang
Life of this patent
Estimating the term…
Abstract
In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher resistivity than the conductive pattern before the converting through the opening, and the mask pattern is removed.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a conductive pattern having a first resistivity in a first main surface of a dielectric layer,
- wherein the dielectric layer includes one or more of silicon oxide, SiON, SiOCN, SiCN, SiOC, silicon nitride, and an organic material, and
- the conductive pattern has a first main surface coplanar to the first main surface of the dielectric layer,
- forming a mask pattern over the first main surface of the dielectric layer, the mask pattern including an opening over the first main surface of the conductive pattern;
- converting a part of the conductive pattern into a high-resistance part having a second resistivity higher than the first resistivity;
- removing the mask pattern;
- forming a first conductive via in contact with and on a conductive part of the first main surface of the conductive pattern;
- and
- forming a second conductive via in contact with and on the high-resistance part,
- wherein a portion of the second conductive via contacting the high-resistance part is electrically conductive.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a conductive pattern having a main surface in a trench formed in a main surface of a dielectric layer,
- wherein the dielectric layer includes one or more of silicon oxide, SiON, SiOCN, SiCN, SiOC, silicon nitride, and an organic material;
- forming a mask pattern over the main surface of the dielectric layer, the mask pattern including an opening over the main surface of the conductive pattern;
- converting a part of the conductive pattern through the opening into a high-resistance part having a higher resistivity than the conductive pattern before the converting through the opening;
- removing the mask pattern;
- forming a first via in contact with and on a conductive part of the main surface of the conductive pattern;
- and
- forming a second via in contact with and on the high-resistance part,
- wherein a portion of the second via contacting the high-resistance part is electrically conductive.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer dielectric layer having a main surface over a substrate,
- wherein the interlayer dielectric layer includes one or more of silicon oxide, SiON, SiOCN, SiCN, SiOC, silicon nitride, and an organic material;
- forming a wiring pattern having a main surface in the main surface of the interlayer dielectric layer,
- wherein the main surface of the wiring pattern and the main surface of the interlayer dielectric layer are coplanar;
- forming a hard mask layer over the main surface of the wiring pattern;
- patterning the hard mask layer to form an opening exposing a region of the main surface of the wiring pattern;
- increasing a resistance of a portion of the exposed region of the main surface of the wiring pattern,
- wherein another portion of the wiring pattern remains at a same resistivity as before the increasing a resistance of a portion of the exposed region of the wiring pattern;
- removing remaining portions of the hard mask layer;
- forming a first via in contact with and on the increased resistance portion of the wiring pattern and
- forming a second via in contact with and on a main surface of the another portion of the wiring pattern,
- wherein a portion of the first via contacting the increased resistance portion is electrically conductive.
9 more elements
Dependencies are inferred from the claim text.