Semiconductor device and method manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJiwon KANG, Wandon KIM, Geunwoo KIM, Sungrok PARK
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, includes: forming a source/drain region; forming an interlayer insulating layer on the source/drain region; forming a contact hole by removing at least a portion of the interlayer insulating layer to expose the source/drain region; forming a metal-semiconductor compound layer in the contact hole to be connected to the source/drain region; forming a liner conductive layer on the metal-semiconductor compound layer; and oxidizing the liner conductive layer; removing an oxidized portion of the liner conductive layer; and forming a contact conductive layer on the liner conductive layer.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a source/drain region;
- forming an interlayer insulating layer on the source/drain region;
- forming a contact hole by removing at least a portion of the interlayer insulating layer to expose the source/drain region;
- forming a metal-semiconductor compound layer in the contact hole to be connected to the source/drain region;
- forming a liner conductive layer on the metal-semiconductor compound layer;
- and
- oxidizing the liner conductive layer;
- removing an oxidized portion of the liner conductive layer;
- forming a preliminary contact conductive layer on the liner conductive layer;
- forming a sacrificial metal layer on the preliminary contact conductive layer;
- removing the sacrificial metal layer and a portion of the preliminary contact conductive layer using a planarization process;
- and
- forming a contact conductive layer by heat treating the preliminary contact conductive layer using hydrogen plasma.
A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor region on a substrate and forming an interlayer insulating layer on the semiconductor region;
- removing a portion of the interlayer insulating layer to form a contact hole exposing the semiconductor region;
- forming a metal-semiconductor compound layer on a lower end of the contact hole to be connected to the semiconductor region;
- forming a liner conductive layer on the metal-semiconductor compound layer;
- forming a preliminary contact conductive layer on the liner conductive layer;
- and
- forming a contact conductive layer by heat-treating the preliminary contact conductive layer such that a size of a crystal grain of the contact conductive layer is greater than a size of a crystal grain of the preliminary contact conductive layer.
A method of manufacturing a semiconductor device, comprising:
- forming a source/drain region and an interlayer insulating layer on the source/drain region;
- removing a portion of the interlayer insulating layer to form a contact hole exposing the source/drain region;
- forming a metal-semiconductor compound layer on a lower end of the contact hole;
- forming a liner conductive layer on the metal-semiconductor compound layer;
- removing a portion of the liner conductive layer;
- forming a preliminary contact conductive layer on the liner conductive layer;
- forming a sacrificial metal layer on the preliminary contact conductive layer;
- removing the sacrificial metal layer and a portion of the preliminary contact conductive layer using a planarization process;
- and
- heat-treating the preliminary contact conductive layer using hydrogen plasma to form a contact conductive layer,
- wherein the liner conductive layer is formed such that the liner conductive layer has a first thickness on a side surface of the contact conductive layer, and a second thickness, greater than the first thickness, on a bottom surface of the contact conductive layer.
Dependencies are inferred from the claim text.