Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
AssigneeASM Microchemistry Oy
InventorsPekka J. Soininen, Kai-Erik Elers, Suvi Haukka
Life of this patent
Estimating the term…
Loading patent…
AssigneeASM Microchemistry Oy
InventorsPekka J. Soininen, Kai-Erik Elers, Suvi Haukka
Estimating the term…
This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.
A method of producing a conductive thin film, comprising:
A method of producing a conductive thin film comprising the steps of:
A method of producing a conductive thin film comprising:
Dependencies are inferred from the claim text.