H10W 20/0636
The conductive members being on sidewalls
Official title: {the conductive members being on sidewalls}
H10W20/0636 (The conductive members being on sidewalls) appears on 109 US grants and 106 published applications in this corpus.
Search patents in H10W- Granted patents
- 109
- Published applications
- 106
- Assignees
- 38
- Inventors
- 211
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 2 |
| 2002 | 2 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 1 |
| 2008 | 2 | 3 |
| 2009 | 1 | 1 |
| 2010 | 2 | 3 |
| 2011 | 3 | 2 |
| 2012 | 0 | 4 |
| 2013 | 4 | 6 |
| 2014 | 5 | 4 |
| 2015 | 6 | 8 |
| 2016 | 7 | 4 |
| 2017 | 7 | 7 |
| 2018 | 4 | 1 |
| 2019 | 5 | 4 |
| 2020 | 7 | 10 |
| 2021 | 5 | 6 |
| 2022 | 8 | 11 |
| 2023 | 6 | 11 |
| 2024 | 7 | 11 |
| 2025 | 7 | 2 |
| 2026 | 5 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor devices and method of manufacturing the same18 Aug 2026US 12,713,886 B2Samsung Electronics Co., Ltd.
- Semiconductor device with metal spacers and method for fabricating the same31 Mar 2026US 12,593,676 B2Nanya Technology Corporation
- Metal spacers with hard masks formed using a subtractive process24 Mar 2026US 12,588,493 B2Intel Corporation
- Subtractive skip via10 Feb 2026US 12,550,704 B2International Business Machines Corporation
- Selective formation of conductor nanowires3 Feb 2026US 12,543,551 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective formation of conductor nanowires4 Jun 2026US 2026/0157167 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnection structure with composite isolation feature and method for manufacturing the same27 Feb 2025US 2025/0070028 A1Nanya Technology Corporation
- Buried lines and related fabrication techniques27 Feb 2025US 2025/0072118 A1Micron Technology, Inc.
- Semiconductor device with protection liners and air gaps and method for fabricating the same26 Dec 2024US 2024/0429171 A1Nanya Technology Corporation
- Interconnect conductive structure comprising two conductive materials7 Nov 2024US 2024/0371770 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Reduced contact area of sidewall conductor392US 6,429,064 B1Intel Corporation · 2002
- Reduced contact area of sidewall conductor390US 6,597,009 B2Intel Corporation · 2003
- Technique for extending the limits of photolithography63US 6,140,217 AInternational Business Machines Corporation · 2000
- Vertically oriented nano-fuse and nano-resistor circuit elements41US 6,611,039 B2Hewlett-Packard Development Company, L. P. · 2003
- Method of nanometer lithography33US 5,110,760 AThe United States of America as represented by the Secretary of the Navy · 1992