Subtractive skip via

A semiconductor device comprising:

• a first wiring layer that includes a bottom wiring structure;
• a second wiring layer above the first wiring layer, the second wiring layer comprising a second wiring layer insulator;
• a third wiring layer above the second wiring layer, the third wiring layer comprising a top wiring structure within a third wiring layer insulator;
• a subtractive skip via that connects the bottom wiring structure and the top wiring structure;
• and
• a dielectric fill around a side perimeter of the subtractive skip via and between the second wiring layer insulator and the third wiring layer insulator.

A semiconductor device comprising:

• a first wiring layer that includes a first bottom wiring structure and a second bottom wiring structure;
• a second wiring layer above the first wiring layer, the second wiring layer comprising a second wiring layer insulator;
• a third wiring layer above the second wiring layer, the third wiring layer comprising a third wiring layer insulator, a first top wiring structure within the third wiring layer insulator, and a second top wiring structure within the third wiring layer insulator;
• a dual subtractive skip via comprising a first subtractive skip via that connects the first bottom wiring structure and the first top wiring structure and a second subtractive skip via that connects the second bottom wiring structure and the second top wiring structure;
• and
• a dielectric fill between the first subtractive skip via and the second subtractive skip via.