Interconnection structure with composite isolation feature and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
Life of this patent
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Abstract
A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an interconnection structure, a first isolation feature, and a second isolation feature. The interconnection structure has a first lateral surface and a second lateral surface. The first isolation feature is disposed on the first lateral surface of the interconnection structure. The second isolation feature is disposed on the second lateral surface of the interconnection structure. The first isolation feature is different from the second isolation feature.
Claims16
A semiconductor device, comprising:
- a substrate;
- a first dielectric layer disposed over the substrate;
- a first interconnection structure disposed over the first dielectric layer;
- a second interconnection structure disposed over the first dielectric layer;
- and
- a second dielectric layer disposed over the first interconnection structure, wherein a lateral surface of the second dielectric layer is exposed to the air gap,
- wherein the first interconnection structure is spaced apart from the second interconnection structure by an air gap.
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a first dielectric layer over the substrate;
- forming a second dielectric layer over the first dielectric layer;
- patterning the first dielectric layer and the second dielectric layer to form an opening;
- forming an interconnection structure within the opening;
- and
- forming a third dielectric layer to form an air gap surrounded by the interconnection structure and the third dielectric layer.
Dependencies are inferred from the claim text.