US 12,588,493 B2 · Metal spacers with hard masks formed using a subtractive process

Abstract

An integrated circuit device includes a first interconnect layer, and a conductive first interconnect feature and a conductive second interconnect feature laterally separated by a body of insulating or semiconductor material. In an example, the first and second interconnect features are above the first interconnect layer. The integrated circuit device further includes a non-conductive feature above and on the first interconnect feature, and a conductive third interconnect feature above and on the second interconnect feature. The integrated circuit device also includes a second interconnect layer above the non-conductive feature and third interconnect features. In an example, the second and third interconnect features conductively couple the first and second interconnect layers.

Claims23

Dependent claims

An integrated circuit comprising:

a first interconnect layer;
a conductive first interconnect feature and a conductive second interconnect feature laterally separated by a body of non-conductive material having a first dielectric material, wherein the first and second conductive interconnect features are above the first interconnect layer;
a non-conductive feature having a second dielectric material with a different material composition compared to the first dielectric material, the non-conductive feature being above and directly on the conductive first interconnect feature, and a conductive third interconnect feature above and on the conductive second interconnect feature;
and
a second interconnect layer above the non-conductive feature and conductive third interconnect features, wherein the conductive second and third interconnect features conductively couple the first and second interconnect layers.

2 more elements

An integrated circuit comprising:

a first interconnect layer;
a plurality of conductive interconnect features laterally separated by corresponding bodies of non-conductive material having a first dielectric material, wherein the plurality of conductive interconnect features are above the first interconnect layer;
one or more first non-conductive features having a second dielectric material with a different material composition compared to the first dielectric material, the one or more first non-conductive features being above and directly on corresponding one or more first conductive interconnect features of the plurality of conductive interconnect features;
one or more second non-conductive features having a third dielectric material with a different material composition compared to the first and second dielectric materials, the one or more second non-conductive features being above and directly on corresponding one or more second conductive interconnect features of the plurality of conductive interconnect features;
and
one or more third conductive interconnect features above and on corresponding one or more fourth conductive interconnect features of the plurality of conductive interconnect features.

3 more elements

Dependencies are inferred from the claim text.

Metal spacers with hard masks formed using a subtractive process

Life of this patent

Metal spacers with hard masks formed using a subtractive process

Life of this patent

Abstract

Claims23