H10W 20/063
By forming conductive members before forming protective insulating material
Official title: {by forming conductive members before forming protective insulating material}
H10W20/063 (By forming conductive members before forming protective insulating material) appears on 3,454 US grants and 3,649 published applications in this corpus.
Search patents in H10W- Granted patents
- 3,454
- Published applications
- 3,649
- Assignees
- 492
- Inventors
- 4,881
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 7 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 9 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 8 | 0 |
| 1989 | 4 | 0 |
| 1990 | 14 | 0 |
| 1991 | 15 | 0 |
| 1992 | 15 | 0 |
| 1993 | 14 | 0 |
| 1994 | 13 | 0 |
| 1995 | 18 | 0 |
| 1996 | 23 | 0 |
| 1997 | 35 | 0 |
| 1998 | 33 | 0 |
| 1999 | 54 | 0 |
| 2000 | 88 | 0 |
| 2001 | 96 | 45 |
| 2002 | 102 | 79 |
| 2003 | 77 | 68 |
| 2004 | 61 | 78 |
| 2005 | 47 | 83 |
| 2006 | 48 | 86 |
| 2007 | 75 | 77 |
| 2008 | 50 | 101 |
| 2009 | 54 | 76 |
| 2010 | 80 | 73 |
| 2011 | 61 | 60 |
| 2012 | 56 | 97 |
| 2013 | 84 | 93 |
| 2014 | 120 | 200 |
| 2015 | 132 | 153 |
| 2016 | 147 | 156 |
| 2017 | 175 | 166 |
| 2018 | 150 | 142 |
| 2019 | 156 | 161 |
| 2020 | 184 | 236 |
| 2021 | 203 | 289 |
| 2022 | 213 | 300 |
| 2023 | 181 | 293 |
| 2024 | 218 | 242 |
| 2025 | 209 | 219 |
| 2026 | 97 | 76 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and method of manufacturing the same6 Oct 2026US 12,757,723 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing semiconductor device with air spacer6 Oct 2026US 12,757,724 B2Nanya Technology Corporation
- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
- Interconnect structure with intra-level metal line connectors29 Sep 2026US 12,751,276 B2International Business Machines Corporation
- Semiconductor device structure with dielectric liner portions and method for preparing the same29 Sep 2026US 12,751,282 B2Nanya Technology Corporation
- Increased thermal conductivity of semi-damascene metal wiring1 Oct 2026US 2026/0305291 A1International Business Machines Corporation
- Voltage differential tolerant net lines in semiconductor structures1 Oct 2026US 2026/0305307 A1International Business Machines Corporation
- Integrated circuit devices including a self-aligned via-less contact structure and methods of forming the same24 Sep 2026US 2026/0293642 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of fabricating the same24 Sep 2026US 2026/0293654 A1Samsung Electronics Co., Ltd.
- Subtractive interconnect structure with top via17 Sep 2026US 2026/0282872 A1International Business Machines Corporation
Most cited
By later US patents
- Chip interconnect and packaging deposition methods and structures556US 7,147,766 B2ASM Nutool, Inc. · 2006
- Combined gate cap or digit line and spacer deposition using HDP493US 6,756,293 B2Micron Technology, Inc. · 2004
- Method of processing a substrate and a device manufactured by using the method455US 10,134,757 B2ASM IP Holding B. V. · 2018
- TSV structures and methods for forming the same396US 8,803,316 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Reduced contact area of sidewall conductor392US 6,429,064 B1Intel Corporation · 2002