H10W 20/062
By smoothing of conductive parts
Official title: {by smoothing of conductive parts, e.g. by planarisation}
H10W20/062 (By smoothing of conductive parts) appears on 2,722 US grants and 2,852 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,722
- Published applications
- 2,852
- Assignees
- 432
- Inventors
- 4,651
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 7 | 0 |
| 1986 | 7 | 0 |
| 1987 | 8 | 0 |
| 1988 | 8 | 0 |
| 1989 | 13 | 0 |
| 1990 | 12 | 0 |
| 1991 | 10 | 0 |
| 1992 | 10 | 0 |
| 1993 | 16 | 0 |
| 1994 | 9 | 0 |
| 1995 | 8 | 0 |
| 1996 | 13 | 0 |
| 1997 | 11 | 0 |
| 1998 | 18 | 0 |
| 1999 | 30 | 0 |
| 2000 | 86 | 0 |
| 2001 | 84 | 39 |
| 2002 | 117 | 131 |
| 2003 | 94 | 126 |
| 2004 | 128 | 162 |
| 2005 | 92 | 153 |
| 2006 | 96 | 118 |
| 2007 | 81 | 121 |
| 2008 | 71 | 75 |
| 2009 | 56 | 47 |
| 2010 | 54 | 57 |
| 2011 | 38 | 50 |
| 2012 | 49 | 57 |
| 2013 | 58 | 59 |
| 2014 | 73 | 87 |
| 2015 | 57 | 111 |
| 2016 | 114 | 108 |
| 2017 | 132 | 154 |
| 2018 | 127 | 143 |
| 2019 | 148 | 163 |
| 2020 | 163 | 179 |
| 2021 | 145 | 159 |
| 2022 | 105 | 136 |
| 2023 | 109 | 141 |
| 2024 | 99 | 108 |
| 2025 | 97 | 107 |
| 2026 | 62 | 61 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with MIM capacitor and method for manufacturing same29 Sep 2026US 12,751,022 B2Hangzhou Fullsemi Semiconductor Co., Ltd.
- Chemical mechanical polishing composition and polishing method22 Sep 2026US 12,742,098 B2Jsr Corporation
- Metal interconnect structure and method for fabricating the same15 Sep 2026US 12,740,384 B2United Microelectronics Corp.
- Conductive structures and methods of forming the same8 Sep 2026US 12,733,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structures with improved metal capping layers25 Aug 2026US 12,721,120 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Package structure and method for fabricating the same8 Oct 2026US 2026/0314354 A1National Yang Ming.Chiao Tung University
- Conductive structures and methods of forming the same8 Oct 2026US 2026/0314355 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to improve interconnect coefficient of thermal expansion8 Oct 2026US 2026/0314357 A1APPLIED Materials.Inc.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314374 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dummy structure for chip-on-wafer-on-substrate961US 9,425,126 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method and structure to improve reliability of copper interconnects562US 7,129,165 B2ASM Nutool, Inc. · 2006
- Chip interconnect and packaging deposition methods and structures556US 7,147,766 B2ASM Nutool, Inc. · 2006
- Fabrication of semiconductor interconnect structures553US 7,172,497 B2ASM Nutool, Inc. · 2007
- Method for producing interconnect structures for integrated circuits524US 8,252,659 B2Imec · 2012