US 12,742,098 B2Granted

Chemical mechanical polishing composition and polishing method

AssigneeJsr Corporation

InventorsKoki Ishimaki, Shuhei Nakamura, Yasutaka Kamei, Kohei Nishimura

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Abstract

The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (ClO−), chlorite ions (ClO2−) and hypobromite ions (BrO−) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).

Claims9

Dependent claims

A chemical mechanical polishing composition comprising:

silica particles (A);
an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (ClO−), chlorite ions (ClO2−) and hypobromite ions (BrO−) or a salt thereof (B);
and
hydrogen peroxide (C),
wherein MB/MC=0.015 to 11, where MB (mol/L) is an amount of the acid or salt thereof (B) and MC (mol/L) is an amount of hydrogen peroxide (C),
wherein the silica particles (A) have a functional group represented by the following general formula (1), (2), (3) or (4):
(in the general formulae (1) and (2), M+ represents a monovalent cation),
(in the general formulae (3) and (4), R1, R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and M-represents an anion).

5 more elements

Dependencies are inferred from the claim text.